Temperature Effects

________ junction diode parameters like reverse saturation current, bias current, reverse breakdown voltage and barrier voltage are dependent on temperature.

Rise in temperature generates more ________ pairs thus conductivity increases and thus there is an increase in current.

Increase in ________ current with temperature offsets the effect of rise in temperature.

________ (leakage) Current: As an ideal diode does not contain a breakdown end, it never performs and ________ current termed leakage current.

________: When a(n) ________ is in forward bias, it offers no resistance and acts as an open switch.

________ (VR) also increases as we increase the temperature.

It is a(n) ________ when voltage is applied in reverse.

________: It is the maximum possible power dissipation of the diode when it is forward biased.

________ is also dependent on temperature as it decreases 2.5mV per degree Celsius for germanium and silicon.

When an ideal diode is in forward bias, it offers no resistance and acts as an open switch

A diode which is said to be forward biased it starts conducting at knee voltage and under reverse bias no current due to majority charges hence a practical diode is considered to be an open switch(minority charge current ignored)

Ideal diodes do not have a threshold voltage

Ideal diodes include unlimited forward current when any forward voltage is applied across the terminals

Ideal diodes do not have breakdown voltage

As an ideal diode does not contain a breakdown end, it never performs and reverse current termed leakage current

Also known as Maximum Reverse Voltage, it is the max allowable reverse operating voltage that can be applied across the diode without reverse breakdown and damaging occurring to the device

It is the maximum possible power dissipation of the diode when it is forward biased

offers infinite resistance and hence acts like an open switch